p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 1 1 0 2 p f p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s - 1 0 0 v / - 3 0 a , r d s ( o n ) = 3 3 m w ( t y p . ) @ v g s = - 1 0 v r d s ( o n ) = 3 9 m w ( t y p . ) @ v g s = - 4 . 5 v r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) t o p v i e w o f t o - 2 2 0 p - c h a n n e l m o s f e t n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . g s d s d g apm1102p handling code temperature range package code package code f : to-220 operating junction temperature range c : -55 to 150 o c handling code tu : tube assembly material g : halogen and lead free device apm1102p f : apm1102p xxxxx xxxxx - date code assembly material p o w e r m a n a g e m e n t i n d c / d c c o n v e r t e r s a n d b a t t e r y p o w e r e d s y s t e m
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 2 a p m 1 1 0 2 p f a b s o l u t e m a x i m u m r a t i n g s symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage - 100 v gss gate - source voltage 25 v t j maximum junction temperature 150 c t stg storage temperature range - 55 to 150 c i s diode continuous forwar d current - 10 a t c =25 c - 120 i d p 300 s pulse drain current tested t c =100 c - 72 a t c =25 c - 30 i d continuous drain current t c =100 c - 18 a t c =25 c 62.5 p d maximum power dissipation t c =100 c 25 w r q jc thermal resistance - junction to case 2 r q ja thermal resistance - junction to ambient 62.5 c /w e as drain - source avalanche energy, l=0.5mh 150 mj e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 1102pf symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 100 - - v v ds = - 80 v, v gs =0v - - - 1 i dss zero gate voltage drain current t j = 85 c - - - 30 m a v gs(th) g ate threshold voltage v ds =v gs , i ds = - 250 m a - 1.5 - 2.2 - 3 v i gss gate leakage current v gs = 25 v, v ds =0v - - 100 na v gs = - 10 v, i ds = - 20 a - 33 42 r ds(on) a drain - source on - state resistance v gs = - 4.5 v, i ds = - 10 a - 39 52 m w diode characteristics v sd a diode fo rward voltage i sd = - 10 a, v gs =0v - - 0.8 - 1.1 v t rr reverse recovery time - 41 - ns qrr reverse recovery charge i d s = - 20 a, dl sd /dt = 100a/ m s - 73 - nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 3 a p m 1 1 0 2 p f e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 1102pf symbol parameter test condition s min. typ. max. unit dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz - 3.4 - w c iss input capacitance - 3250 - c oss output capacitance - 310 - c rs s reverse transfer capacitance v gs =0v, v ds = - 30v, f requency =1.0mhz - 180 - pf t d(on) turn - on delay time - 13 24 t r turn - on rise time - 7 14 t d(off) turn - off delay time - 108 195 t f turn - off fall time v dd = - 30 v, r l = 30 w , i d s = - 1a, v gen = - 10v , r g =6 w - 46 84 ns gate charge characteristics b q g total gate charge - 76.4 - q gs gate - source charge - 13.6 - q gd gate - drain charge v ds = - 50 v, v gs = - 10 v, i d s = - 20 a - 18.5 - nc note a : pulse test ; pulse width 3 00 m s, duty cycle 2% . note b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 4 a p m 1 1 0 2 p f t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) normalized transient thermal resistance t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 t c =25 o c 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 t c =25 o c,v g =-10v 0.1 1 10 100 300 0.1 1 10 100 200 1s 10ms 100ms dc rds(on) limit t c =25 o c 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on minimum pad r q ja :62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 5 a p m 1 1 0 2 p f v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) v g s - g a t e - s o u r c e v o l t a g e ( v ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) d r a i n - s o u r c e o n r e s i s t a n c e r ds(on) - on - resistance (m w ) v gs - gate-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 -3v -4v -3.5v v gs = -4.5,-5,-,6,-7,-8,-9,-10v 0 10 20 30 40 50 60 20 25 30 35 40 45 50 55 60 v gs =4.5v v gs =10v 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 i ds =-20a -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 m a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 6 a p m 1 1 0 2 p f d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - capacitance (pf) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate-source voltage (v) t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 60 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 35 40 0 500 1000 1500 2000 2500 3000 3500 4000 4500 frequency=1mhz crss coss ciss 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 v ds = -50v i ds = -20a -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 33m w v gs = -10v i ds = -20a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 7 a p m 1 1 0 2 p f p a c k a g e i n f o r m a t i o n to-220 a2 l l 1 e p q d h 1 a a1 c d 1 e1 d 2 b b2 e/2 e e2 s y m b o l min. max. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 a a1 b2 c d d1 d2 e millimeters b 0.38 1.02 2.54 bsc to-220 9.65 10.67 6.86 0.100 bsc min. max. inches 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 e1 0.355 0.250 0.580 p l l1 e 12.70 8.38 9.02 6.35 14.73 0.500 0.330 q h1 5.84 6.86 0.230 0.270 4.09 0.161 2.03 a2 2.92 0.080 0.115 e2 0.76 0.030 12.88 0.507 0.350 8.89 3.53 0.139 2.54 3.43 0.100 0.135 note: follow jedec to-220 ab.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 8 a p m 1 1 0 2 p f c l a s s i f i c a t i o n p r o f i l e profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. c l a s s i f i c a t i o n r e f l o w p r o f i l e s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - m a y . , 2 0 0 9 w w w . a n p e c . c o m . t w 9 a p m 1 1 0 2 p f c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . ) table 2. pb - free process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm ? 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 22 0 c 3 2.5 mm 220 c 220 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability jesd - 22, b102 5 sec, 245 c holt jesd - 22, a108 1000 hrs, bias @ 125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838
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